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參數(shù)資料
| 型號(hào)： | MGF0952P |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | PLASTIC, LEADLESS PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 56K |
| 代理商： | MGF0952P |
(1/6)
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm
High power gain
Glp=13.5dB(TYP.)
@f=2.15GHz
High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm
Plastic Mold Lead-less PKG
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=700mA
Rg=100
Delivery
Tape & Reel(1.5K)
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
3.5
A
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21
mA
PT
Total power dissipation
20.0
W
Tch
Cannel temperature
150
°C
Tstg
Storage temperature
-40 to +150
°C
Recommended maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
Tch
Cannel temperature
150
°C
Electrical characteristics
(Ta=25
°C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=12.6mA
-1
-3
-5
V
Po
*1
Output power
VDS=10V,ID=700mA,f=2.15GHz
35.0
36.5
--
dBm
ηadd *1 Power added Efficiency
*1:Pin=25dBm , *2:Pin=15dBm
--
50
--
%
GLP
*2
Linear Power Gain
*3:f1=2.15GHz,f2=2.16GHz
11
13.5
--
dB
IM3
*3
3
rd order Modulation Distortion
Po(SCL)=25dBm
--
-42
--
dBc
Rth(ch-c)
Thermal Resistance
*1
Vf Method
--
5
6
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1
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