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參數(shù)資料
| 型號： | MG300Q2YS50 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | 2-109C4A, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 260K |
| 代理商： | MG300Q2YS50 |
MG300Q2YS50
2002-08-22
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
(25°C / 80°C)
400 / 300
Collector current
1ms
ICP
(25°C / 80°C)
800 / 600
A
DC
IF
300
Forward current
1ms
IFM
600
A
Collector power dissipation (Tc = 25°C)
PC
2000
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 1200V, VGE = 0
―
1.0
mA
Gate-emitter cut-off voltage
VGE (OFF)
IC = 300mA, VCE = 5V
3.0
―
6.0
V
Tj = 25°C
―
2.8
3.6
Collector-emitter saturation voltage
VCE (sat)
IC = 300A,
VGE = 15V
Tj = 125°C
―
3.1
4.0
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
30.0
―
nF
Turn-on delay time
td (on)
―
0.05
―
Rise time
tr
―
0.05
―
Turn-on time
ton
―
0.2
―
Turn-off delay time
td (off)
―
0.5
―
Fall time
tf
―
0.1
0.3
Switching time
Turn-off time
toff
Inductive load
VCC = 600V
IC = 300A
VGE = ±15V
RG = 2.7
(Note 1)
―
0.6
―
s
Forward voltage
VF
IF = 300 A, VGE = 0
―
2.4
3.5
V
Reverse recovery time
trr
IF = 300 A, VGE = 10 V,
di / dt = 1000 A / s
(Note 1)
―
0.2
0.3
s
Transistor stage
―
0.06
Thermal resistance
Rth (j-c)
Diode stage
―
0.19
°C / W
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