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參數(shù)資料
| 型號(hào)： | MG150Q2YS65H |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | 2-95A4A, 7 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MG150Q2YS65H |
MG150Q2YS65H
2002-10-04
4
Sw
itc
hin
g
lo
ss
(
m
J)
Sw
itc
hin
gtim
e
(
s)
Collector current IC (A)
Switching time – IC
Sw
itc
hin
gtim
e
(
s)
Collector current IC (A)
Switching time – IC
Sw
itc
hin
gtim
e
(
s)
Gate resistance RG ()
Switching time – RG
Sw
itc
hin
gtim
e
(
s)
Gate resistance RG ()
Switching time – RG
Collector current IC (A)
Switching loss – IC
Gate resistance RG ()
Switching loss – RG
Sw
itc
hin
g
lo
ss
(
m
J)
0.01
0.1
1
0
10
50
20
30
40
tr
td (on)
ton
Common emitter
VCC = 600 V
IC = 150 A
VGE = ±15 V
: Tc
= 25°C
: Tc
= 125°C
0.01
10
0.1
1
100
1000
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 5.6
tr
ton
td (on)
0.01
10
0.1
1
100
1000
toff
td (on)
tf
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 5.6
: Tc
= 25°C
: Tc
= 125°C
0.01
0.1
10
0
10
50
20
30
40
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
IC = 15 A
VGE = ±15 V
toff
td (off)
tf
1
10
100
0
10
50
20
30
40
Eon
Eoff
Edsw
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
IC = 150 A
VGE = ±15 V
1
10
100
0
50
200
100
150
Eoff
Edsw
Eon
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 5.6
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