參數(shù)資料
型號(hào): MG150Q2YS65H
元件分類: IGBT 晶體管
英文描述: 150 A, 1200 V, N-CHANNEL IGBT
封裝: 2-95A4A, 7 PIN
文件頁數(shù): 3/6頁
文件大小: 0K
代理商: MG150Q2YS65H
MG150Q2YS65H
2002-10-04
3
Collector-emitter voltage VCE (V)
IC – VCE (sat)
Co
lle
ct
or
cu
rr
e
nt
I C
(A
)
Collector-emitter voltage VCE (V)
IC – VCE (sat)
Co
lle
ct
or
cu
rr
e
nt
I C
(A
)
Gate-emitter voltage VGE (V)
VCE – VGE
Co
lle
ct
or
-e
m
itte
r
vo
lta
ge
V
CE
(V
)
Gate-emitter voltage VGE (V)
VCE – VGE
Co
lle
ct
or
-e
m
itte
r
vo
lta
ge
V
CE
(V
)
Gate-emitter voltage VGE (V)
IC – VGE
Co
lle
ct
or
cu
rr
e
nt
I C
(A
)
Forward voltage VF (V)
IF – VF
Fo
rw
ar
dc
ur
ren
t
I F
(A
)
Tc
= 125°C
0
50
100
150
200
250
300
4
8
12
16
20
Common emitter
VCE = 5 V
40°C
25°C
0
2
4
6
8
10
12
4
8
12
16
20
Common emitter
Tc
= 125°C
IC = 300 A
75 A
150 A
0
2
4
6
8
10
12
4
8
12
16
20
Common emitter
Tc
= 25°C
IC = 300 A
150 A
75 A
0
50
100
150
200
250
300
1
2
3
4
5
40°C
125°C
Tc
= 25°C
Common cathode
VGE = 0
12 V
Common emitter
Tc
= 25°C
0
2
4
6
8
10
50
100
150
200
250
300
VGE = 8 V
15 V
10 V
20 V
18 V
Common emitter
Tc
= 125°C
0
2
4
6
8
10
50
100
150
200
250
300
VGE = 8 V
15 V
10 V
20 V
18 V
12 V
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