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參數(shù)資料
| 型號： | MG150J2YS50 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 2-95A1A, 7 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 456K |
| 代理商： | MG150J2YS50 |
MG150J2YS50
2001-02-22 2/5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
2.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 15mA, VCE = 5V
5.0
7.0
8.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 150A, VGE = 15V
―
2.10
2.70
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
14200
―
pF
Turn-on delay time
td(on)
―
0.15
0.30
Rise time
tr
―
0.15
0.30
Turn-on time
ton
―
0.50
1.00
Turn-off delay time
td(off)
―
0.20
0.40
Fall time
tf
―
0.15
0.30
Switching time
Turn-off time
toff
Inductive load
VCC = 300V
IC = 150A
VGE = ±15V
RG = 6.2
(Note 1)
―
0.50
1.00
s
Forward voltage
VF
IF = 150A, VGE = 0
―
2.30
3.00
V
Reverse recovery time
trr
IF = 150A, VGE = 10V
di / dt = 200A / s
―
0.08
0.15
s
Transistor stage
―
0.16
Thermal resistance
Rth (j-c)
Diode stage
―
0.35
°C / W
Note 1: Switching time test circuit & timing chart
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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| MG150M2YK1 | 制造商:n/a 功能描述:IGBT Module |
| MG150M2YL1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MODULES |
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