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參數(shù)資料
| 型號： | MCZ33883EG |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | H-Bridge Gate Driver IC |
| 中文描述： | H橋門驅(qū)動器集成電路 |
| 文件頁數(shù)： | 16/21頁 |
| 文件大?。?/td> | 323K |
| 代理商： | MCZ33883EG |
Analog Integrated Circuit Device Data
Freescale Semiconductor
16
33883
FUNCTIONAL DEVICE OPERATION
PROTECTION AND DIAGNOSTIC FEATURES
PROTECTION AND DIAGNOSTIC FEATURES
GATE PROTECTION
The low-side driver is supplied from the built-in low-drop
regulator. The high-side driver is supplied from the internal
charge pump buffered at CP_OUT.
The low-side gate is protected by the internal linear
regulator, which ensures that V
GATE_LS
does not exceed the
maximum V
GS
. Especially when working with the charge
pump, the voltage at CP_OUT can be up to 65 V. The high-
side gate is clamped internally in order to avoid a V
GS
exceeding 18 V.
Gate protection does not include a fly-back voltage clamp
that protects the driver and the external MOSFET from a fly-
back voltage that can occur when driving inductive load. This
fly-back voltage can reach high negative voltage values and
needs to be clamped externally, as shown in
Figure 12
.
Figure 12. Gate Protection and Flyback Voltage Clamp
LOAD DUMP AND REVERSE BATTERY
V
CC
and V
CC2
can sustain load a dump pulse of 40 V and
double battery of 24 V. Protection against reverse polarity is
ensured by the external power MOSFET with the free-
wheeling diodes forming a conducting pass from ground to
V
CC
. Additional protection is not provided within the circuit.
To protect the circuit an external diode can be put on the
battery line. It is not recommended putting the diode on the
ground line.
TEMPERATURE PROTECTION
There is temperature shutdown protection per each half-
bridge. Temperature shutdown protects the circuitry against
temperature damage by switching off the output drivers. Its
typical value is 175°C with an hysteresis of 15°C.
DV/DT AT V
CC
V
CC
voltage must be higher than (SRC_HS voltage minus
a diode drop voltage) to avoid perturbation of the high-side
driver.
In some applications a large dV / dt at terminal C2 owing to
sudden changes at V
CC
can cause large peak currents
flowing through terminal C1, as shown in
Figure 13
.
For positive transitions at terminal C2, the absolute value
of the minimum peak current, I
C1
min, is specified at 2.0 A for
a t
C1
min duration of 600 ns.
For negative transitions at terminal C2, the maximum peak
current, I
C1
max, is specified at 2.0 A for a t
C1
max duration of
600 ns. Current sourced by terminal C1 during a large dV / dt
will result in a negative voltage at terminal C1 (
Figure 13
).
The minimum peak voltage V
C1
min is specified at -1.5 V for a
duration of t
C1
max = 600 ns. A series resistor with the charge
pump capacitor (Ccp) capacitor can be added in order to limit
the surge current.
Output
Driver
OUT
Output
Driver
OUT
IN
L
1
M
2
GATE_LS
SRC_HS
GATE_HS
Inductive
Flyback Voltage
Clamp
IN
D
c
M
1
V
CC
CP_OUT
LR_OUT
V
GS
< 14 V
Under All
Conditions
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCZ33883EG | 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR |
| MCZ33883EGR2 | 功能描述:功率驅(qū)動器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCZ33884EG | 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16 |
| MCZ33884EG | 制造商:Freescale Semiconductor 功能描述:SWITCH MONITOR INTERFACE 24SOIC |
| MCZ33884EGR2 | 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16 |
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