參數(shù)資料
型號(hào): MCZ33883EG
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: H-Bridge Gate Driver IC
中文描述: H橋門驅(qū)動(dòng)器集成電路
文件頁數(shù): 14/21頁
文件大?。?/td> 323K
代理商: MCZ33883EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
14
33883
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
LOW-DROP LINEAR REGULATOR
The low-drop linear regulator is supplied by V
CC2
. If V
CC2
exceeds 15.0 V, the output is limited to 14.5 V (typical).
The low-drop linear regulator provides the 5.0 V for the
logic section of the driver, the V
gs_ls
buffered at LR_OUT, and
the +14.5 V for the charge pump, which generates the
CP_OUT The low-drop linear regulator provides 4.0 mA
average current
per driver stage.
In case of the full bridge, that means approximately
16 mA — 8.0 mA for the high side and 8.0 mA for the low
side.
Note:
The average current required to switch a gate with
a frequency of 100 kHz is:
I
CP
= Q
g
* f
PWM
= 80 nC * 100 kHz = 8.0 mA
In a full-bridge application only one high side and one low
side switches on or off at the same time.
CHARGE PUMP
The charge pump generates the high-side driver supply
voltage (CP_OUT), buffered at C
CP_OUT
.
Figure 8
shows the
charge pump basic circuit without load.
Figure 8. Charge Pump Basic Circuit
When the oscillator is in low state [(1) in
Figure 8
], C
CP
is
charged through D2 until its voltage reaches V
CC
- V
D2
. When
the oscillator is in high state (2), C
CP
is discharged though D1
in C
CP_OUT,
and final voltage of the charge pump, V
CP_OUT
,
is V
cc
+ V
LR_OUT
- 2V
D
. The frequency of the 33883 oscillator
is about 330 kHz.
EXTERNAL CAPACITORS CHOICE
External capacitors on the charge pump and on the linear
regulator are necessary to supply high peak current
absorbed during switching.
Figure 9
represents a simplified circuitry of the high-side
gate driver. Transistors Tosc1 and Tosc2 are the oscillator-
switching MOSFETs. When Tosc1 is on, the oscillator is at
low level. When Tosc2 is on, the oscillator is at high level. The
capacitor C
CP_OUT
provides peak current to the high-side
MOSFET through HSS during turn-on (3).
Figure 9. High-Side Gate Driver
Osc.
Vbat
V
CP_OUT
Ccp_out
C
V
V
LR_OUT
Ccp
D1
D2
A
(1)
(2)
C1
Ccp_out
C
LR-OUT
V
LR_OUT
Ccp
CP
D1
D2
C1
Vcc
V
C2
CP_OUT
SRC_HS
HS
High-Side
MOSFET
Low-Side
MOSFET
HSS
Rg
Tosc1
Tosc1
Tosc2
Tosc2
GATE_HS
pins
(3)
LSS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCZ33883EG 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR
MCZ33883EGR2 功能描述:功率驅(qū)動(dòng)器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCZ33884EG 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻(最大值):7 Ohms 開啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16
MCZ33884EG 制造商:Freescale Semiconductor 功能描述:SWITCH MONITOR INTERFACE 24SOIC
MCZ33884EGR2 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻(最大值):7 Ohms 開啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16