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參數(shù)資料
| 型號： | MCZ33883EG |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | H-Bridge Gate Driver IC |
| 中文描述： | H橋門驅(qū)動器集成電路 |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 323K |
| 代理商： | MCZ33883EG |
Analog Integrated Circuit Device Data
Freescale Semiconductor
12
33883
FUNCTIONAL DEVICE OPERATION
FUNCTIONAL DEVICE OPERATION
DRIVER CHARACTERISTICS
Figure 5
represents the external circuit of the high-side
gate driver. In the schematic, HSS represents the switch that
is used to charge the external high-side MOSFET through the
GATE_HS terminal. LSS represents the switch that is used to
discharge the external high-side MOSFET through the
GATE_HS terminal. A 180K
internal typical passive
discharge resistance and a 18 V typical protection zener are
in parallel with LSS. The same schematic can be applied to
the external low-side MOSFET driver simply by replacing
terminal CP_OUT with terminal LR_OUT, terminal GATE_HS
with terminal GATE_LS, and terminal SRC_HS with GND.
Figure 5. High-Side Gate Driver Functional Schematic
The different voltages and current of the high-side gate
driver are illustrated in
Figure 6
. The output driver sources a
peak current of up to 1.0 A for 200 ns to turn on the gate. After
200 ns, 100 mA is continuously provided to maintain the gate
charged. The output driver sinks a high current to turn off the
gate. This current can be up to 1.0 A peak for a 100 nF load.
Note
GATE_HS is loaded with a 100 nF capacitor in the
chronograms. A smaller load will give lower peak and DC charge or
discharge currents.
Figure 6. High-Side Gate Driver Chronograms
HSS
CP_OUT
I
GATE_HS
GATE_HS1
I
charge HSS
I
discharge LSS
LSS
SRC_HS1
180
k
18V
HSSpulse_IN
LSS_IN
HSSDC_IN
IN_HS1
1.0 A Peak
1.0 A Peak
100 mA Typical
0
0
0
0
0
0
1.0 A Peak
100 mA Typical
-1.0 A Peak
IN_HS1
HSSpulse_IN
HSS DC_IN
LSS_IN
I
discharge LSS
I
GATE_HS
I
charge HSS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCZ33883EG | 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR |
| MCZ33883EGR2 | 功能描述:功率驅(qū)動器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MCZ33884EG | 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時間（最大值）: 關(guān)閉時間（最大值）: 傳播延遲時間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16 |
| MCZ33884EG | 制造商:Freescale Semiconductor 功能描述:SWITCH MONITOR INTERFACE 24SOIC |
| MCZ33884EGR2 | 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時間（最大值）: 關(guān)閉時間（最大值）: 傳播延遲時間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16 |
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