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參數(shù)資料
型號: MCP4716A0T-E/MAY
廠商: Microchip Technology
文件頁數(shù): 56/86頁
文件大小: 0K
描述: IC DAC 10BIT NV EEP I2C 6DFN
標準包裝: 1
設(shè)置時間: 6µs
位數(shù): 10
數(shù)據(jù)接口: EEPROM,I²C,串行
轉(zhuǎn)換器數(shù)目: 1
電壓電源: 單電源
功率耗散(最大): 1.10W
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 6-DFN(2x2)
包裝: 標準包裝
輸出數(shù)目和類型: 1 電壓,單極
采樣率(每秒): *
其它名稱: MCP4716A0T-E/MAYDKR
MCP4706/4716/4726
DS22272C-page 6
2011-2012 Microchip Technology Inc.
Digital Interface
Output Low Voltage
VOL
——
0.4
V
IOL = 3 mA
Input High Voltage
(SDA and SCL Pins)
VIH
0.7VDD
——
V
Input Low Voltage
(SDA and SCL Pins)
VIL
—0.3VDD
V
Input Leakage
ILI
±1
A
SCL = SDA = VSS or
SCL = SDA = VDD
Pin Capacitance
CPIN
——
3
pF
EEPROM
EEPROM Write Time
T
WRITE
—25
50
ms
Data Retention
200
Years
At +25°C, (Note 1)
Endurance
1
Million
Cycles
At +25°C, (Note 1)
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, VSS = 0V, RL = 5 kΩ from VOUT to GND, CL = 100 pF,
TA = -40°C to +125°C. Typical values at +25°C.
Parameters
Symbol
Min
Typical
Max
Units
Conditions
Note
1:
This parameter is ensured by design and is not 100% tested.
2:
This Gain error does not include Offset error. See Section 1.0 “Electrical Characteristics” for more details in plots.
3:
Within 1/2 LSb of final value when code changes from 1/4 to 3/4 of FSR. (Example: 400h to C00h in 12-bit device).
4:
The power-up ramp rate affects on uploading the EEPROM contents to the DAC register. It measures the rise of VDD
over time.
5:
This parameter is ensured by characterization, and not 100% tested.
6:
The PD1:PD0 = 10, and ‘11’ configurations should have the same current.
7:
VDD = VREF = 5.5V.
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