2002 Microchip Technology Inc.
Preliminary
DS21655B-page 25
MCP2150
4.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient Temperature under bias ........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on VDD with respect to VSS ......................................................................................................... -0.3 V to +6.5 V
Voltage on RESET with respect to VSS .................................................................................................... -0.3 V to +14 V
Voltage on all other pins with respect to VSS ............................................................................... –0.3 V to (VDD + 0.3 V)
Total Power Dissipation (1) ...................................................................................................................................800 mW
Max. Current out of VSS pin ..................................................................................................................................300 mA
Max. Current into VDD pin .....................................................................................................................................250 mA
Input Clamp Current, IIK (VI < 0 or VI > VDD)
...................................................................................................................±20 mA
Output Clamp Current, IOK (V0 < 0 or V0 > VDD)
............................................................................................................. ±20 mA
Max. Output Current sunk by any Output pin..........................................................................................................25 mA
Max. Output Current sourced by any Output pin.....................................................................................................25 mA
Note 1: Power Dissipation is calculated as follows:
PDIS = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)
NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.