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參數(shù)資料
| 型號： | MCH6307 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 12 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MCPH6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | MCH6307 |
MCH6307
No.7080-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--12
V
Gate-to-Source Voltage
VGSS
±8V
Drain Current (DC)
ID
--5
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2! 0.8mm)
1.5
W
Mounted on an FR4 board, PW
≤3s
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0
--10
A
Gate-to-Source Leakage Current
IGSS
VGS=±6.4V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.3
--1.0
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--3A
5.8
8.5
S
RDS(on)1
ID=--3A, VGS=--4.5V
35
46
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--1.5A, VGS=--2.5V
47
66
RDS(on)3
ID=--0.3A, VGS=--1.8V
68
98
m
Marking : JG
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7080
MCH6307
Package Dimensions
unit : mm
2193A
[MCH6307]
O2501 TS IM TA-3374
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
Preliminary
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PDF描述 |
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| MCH6308 | 3.5 A, 12 V, 0.098 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| MCH6318 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6321 | 4 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6308-TL-E | 制造商:SANYO 功能描述:Pch 12V 3.5A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 12V 3.5A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6318 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6320 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6320-TL-E | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MCH6321 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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