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參數(shù)資料
| 型號(hào)： | MCH5803 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 48K |
| 代理商： | MCH5803 |
MCH5803
No.6958-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=700mA
0.85
1.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=700mA, VGS=10V
230
300
m
RDS(on)2
ID=400mA, VGS=4V
370
520
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
70
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
15
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
10
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
6
ns
Rise Time
tr
See specified Test Circuit
3
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
10
ns
Fall Time
tf
See specified Test Circuit
4
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.4A
2.6
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.4A
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.4A
0.5
nC
Diode Forward Voltage
VSD
IS=1.4A, VGS=0
0.9
1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=0.3A
0.35
0.40
V
VF2IF=0.5A
0.42
0.47
V
Reverse Current
IR
VR=10V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Electrical Connection (Top view)
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH5803
VIN
10V
0V
VIN
Duty
≤10%
50
100
10
--5V
trr
100mA
10mA
10
s
GS
A
DC
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
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