- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95922 > MCH5805 600 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MCH5805 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | MCH5805 |
MCH5805
No.7125-1/5
Features
Composite type with a P-channel sillicon MOSFET
(MCH3314) and a Schottky barrier diode (SB01-05)
contained in one package facilitating high-density
mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7125
MCH5805
Package Dimensions
unit : mm
2195
[MCH5805]
N1501 TS IM TA-3399
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--0.6
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--2.4
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
50
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
50
V
Average Output Current
IO
0.1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
2
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
相關PDF資料 |
PDF描述 |
|---|---|
| MCH5805 | 600 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5809 | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5809 | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5810 | 400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5805-TL-E | 制造商:SANYO 功能描述:Pch+SBD 60V 0.6A 1.7 MCPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH SCHOT DIODE SC-82 制造商:Sanyo 功能描述:0 |
| MCH5809 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET DC / DC Converter Applications |
| MCH5809-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5810 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications |
| MCH5811 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復。