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參數(shù)資料
| 型號(hào)： | MCH5809 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | MCH5809 |
MCH5809
No.7525-1/5
Features
Composite type with an N-Channel Sillicon MOSFET
(MCH3443) and a Schottky Barrier Diode (SBS006M)
contained in one package facilitating high-density
mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7525
MCH5809
Package Dimensions
unit : mm
2195
[MCH5809]
31504 TS IM TA-100394
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
1.5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
0.5
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
3
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QJ
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
(Bottom view)
(Top view)
相關(guān)PDF資料 |
PDF描述 |
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| MCH5809 | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5810 | 400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5812 | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH5818 | 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5809-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5810 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications |
| MCH5811 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| MCH5811-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5812 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
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