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參數(shù)資料
| 型號： | MCH5809 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | MCH5809 |
MCH5809
No.7525-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=800mA
1.3
2.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=800mA, VGS=4V
165
215
m
RDS(on)2
ID=400mA, VGS=2.5V
210
295
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
130
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
16
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
23
ns
Fall Time
tf
See specified Test Circuit
29
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=1.5A
2.2
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=1.5A
0.52
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.5A
0.52
nC
Diode Forward Voltage
VSD
IS=1.5A, VGS=0
0.9
1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=0.3A
0.35
0.40
V
VF2IF=0.5A
0.42
0.47
V
Reverse Current
IR
VR=10V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Electrical Connection (Top view)
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=800mA
RL=18.75
VDD=15V
VOUT
MCH5809
VIN
4V
0V
VIN
Duty
≤10%
50
100
10
--5V
trr
100mA
10mA
10
s
12
3
54
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MCH5809-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5810 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications |
| MCH5811 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| MCH5811-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 |
| MCH5812 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
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