參數(shù)資料
型號(hào): MCH5802
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MCPH5, 5 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 48K
代理商: MCH5802
MCH5802
No.6961-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--500mA
570
820
mS
RDS(on)1
ID=--500mA, VGS=--10V
430
560
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--300mA, VGS=--4V
780
1090
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
80
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
15
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
13
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
7
ns
Rise Time
tr
See specified Test Circuit
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
15
ns
Fall Time
tf
See specified Test Circuit
7
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1A
2.6
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--1A
0.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--1A
0.6
nC
Diode Forward Voltage
VSD
IS=--1A, VGS=0
--0.9
--1.5
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=0.3A
0.35
0.40
V
VF2IF=0.5A
0.42
0.47
V
Reverse Current
IR
VR=10V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Electrical Connection (Top view)
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID= --500mA
RL=30
VDD= --15V
VOUT
MCH5802
VIN
0V
--10V
VIN
Duty
≤10%
50
100
10
--5V
trr
100mA
10mA
10
s
GS
A
DC
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
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