MCF532x ColdFire Microprocessor Data Sheet, Rev. 5 Electrical Characteristics Fr" />
參數(shù)資料
型號: MCF5327CVM240
廠商: Freescale Semiconductor
文件頁數(shù): 17/50頁
文件大?。?/td> 0K
描述: IC MPU RISC 240MHZ 196-MAPBGA
標準包裝: 126
系列: MCF532x
核心處理器: Coldfire V3
芯體尺寸: 32-位
速度: 240MHz
連通性: EBI/EMI,I²C,SPI,SSI,UART/USART,USB,USB OTG
外圍設備: DMA,LCD,PWM,WDT
輸入/輸出數(shù): 94
程序存儲器類型: ROMless
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 1.4 V ~ 3.6 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 196-LBGA
包裝: 托盤
MCF532x ColdFire Microprocessor Data Sheet, Rev. 5
Electrical Characteristics
Freescale Semiconductor
24
Figure 9. SDR Write Timing
SD9
SD_DQS[3:2] input hold relative to SD_CLK7
tDQISDCH Does not apply. 0.5×SD_CLK fixed width.
SD10
Data (D[31:0]) Input Setup relative to SD_CLK (reference
only)8
tDVSDCH
0.25
×
SD_CLK
—ns
SD11
Data Input Hold relative to SD_CLK (reference only)
tDISDCH
1.0
ns
SD12
Data (D[31:0]) and Data Mask(SD_DQM[3:0]) Output Valid
tSDCHDMV
0.75
× SD_CLK
+ 0.5
ns
SD13
Data (D[31:0]) and Data Mask (SD_DQM[3:0]) Output Hold
tSDCHDMI
1.5
ns
1 The FlexBus and SDRAM clock operates at the same frequency of the internal bus clock. See the PLL chapter of the MCF5329
Reference Manual for more information on setting the SDRAM clock rate.
2 SD_CLK is one SDRAM clock in (ns).
3 Pulse width high plus pulse width low cannot exceed min and max clock period.
4 Pulse width high plus pulse width low cannot exceed min and max clock period.
5 SD_DQS is designed to pulse 0.25 clock before the rising edge of the memory clock. This is a guideline only. Subtle variation
from this guideline is expected. SD_DQS only pulses during a read cycle and one pulse occurs for each data beat.
6 SDR_DQS is designed to pulse 0.25 clock before the rising edge of the memory clock. This spec is a guideline only. Subtle
variation from this guideline is expected. SDR_DQS only pulses during a read cycle and one pulse occurs for each data beat.
7 The SDR_DQS pulse is designed to be 0.5 clock in width. The timing of the rising edge is most important. The falling edge
does not affect the memory controller.
8 Because a read cycle in SDR mode uses the DQS circuit within the device, it is most critical that the data valid window be
centered 1/4 clk after the rising edge of DQS. Ensuring that this happens results in successful SDR reads. The input setup
spec is provided as guidance.
Table 10. SDR Timing Specifications (continued)
Symbol
Characteristic
Symbol
Min
Max
Unit
SD_CLK
SDDM
D[31:0]
A[23:0]
SD_BA[1:0]
CMD
ROW
SD1
SD4
COL
SD5
WD1
WD2
WD3
WD4
SD12
SD11
SD_CSn
SD_RAS
SD_WE
SD_CAS
SD2
SD3
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