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參數(shù)資料
| 型號： | MC74LCX2952SD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | LVC/LCX/Z SERIES, 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO24 |
| 封裝： | PLASTIC, SSOP-24 |
| 文件頁數(shù)： | 27/43頁 |
| 文件大?。?/td> | 383K |
| 代理商： | MC74LCX2952SD |
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Reliability Information
LCX DATA
BR1339 — REV 3
243
MOTOROLA
LCX Qualification Introduction
LCX Qualification consisted of intrinsic and extrinsic
reliability testing. Intrinsic reliability concerns device
degradation issues and is assessed via electromigration,
hot carrier injection and dielectric breakdown measures.
Extrinsic reliability addresses both processing and
packaging related issues and utilizes several tests: high
temperature bias, temperature cycling, pressure
temperature humidity, thermal shock, temperature
humidity bias, surface mount preconditioning, physical
dimensions, solderability and marking permanency.
(Included below are definitions of the aforementioned
terms.)
INTRINSIC RELIABILITY
Electromigration
Electromigration is the movement of metal in the direction
of electron flow. This is accelerated by high current densities
and temperatures which result in metal void and/or collection
(hillock) formations, and ultimately shorts. Design rules
specify minimum metal widths and maximum current
densities to circumvent electromigration issues.
Hot Carrier Injection (HCI)
Hot carrier injection is the result of electron scattering and
subsequent trapping in the gate oxide of MOS devices.
Scattering is a function of electron velocity and thus electric
fields and temperature. Ultimately, carrier mobility and
transconductance are reduced causing threshold voltage
shifts. Processing conditions are set to minimize hot carrier
generation rates and gate trapping efficiencies.
Dielectric Breakdown
Dielectric breakdown results in the formation of a
conductive path connecting once–isolated conducting layers.
High voltage induced charge injection and trapping
accelerates this breakdown. Dielectric integrity is maximized
via uniform depositional thickness, and dielectric quality is
achieved through minimizing impurity, charge, and defect
levels.
EXTRINSIC RELIABILITY
High Temperature Bias (HTB)
High temperature bias (HTB) testing is performed to
accelerate failure mechanisms which are activated through
the application of elevated temperatures and the use of
biased operating conditions. The temperature and voltage
conditions used in the stress are dependent on the product
under stress. However, the typical ambient temperature is
145
°C with the static bias applied equal to or greater than the
data sheet nominal value.
Temperature Cycling (MIL–STD–833D–1010C)
Temperature cycle testing accelerates the effects of
thermal expansion mismatch among the different
components within a specific die and packaging system. This
test is typically performed per MIL–STD–883D Method
1010C with the minimum and maximum temperatures being
–65
°C and +150°C, respectively. During temperature cycle
testing, devices are inserted into a cycling system and held at
the cold dwell temperature for at least ten minutes. Following
this cold dwell, the devices are heated to the hot dwell where
they remain for another ten minute minimum time period. The
system employs a circulating air environment to assure rapid
stabilization at the specified temperature. The dwell at each
extreme, plus the two transition times of five minutes each
(one up to the hot dwell temperature, another down to the
cold dwell temperature), constitute one cycle.
Thermal Shock (MIL–STD–833D–1010C)
The objective of thermal shock testing is the same as that
for temperature cycle testing, that is, to emphasize
differences in expansion coefficients for components of the
packaging system. However, thermal shock provides
additional stress, in that the device is exposed to a sudden
change in temperature due to a maximum transfer time of ten
seconds, as well as the increased thermal conductivity of a
liquid ambient. This test is typically performed per
MIL–STD–883D Method 1011C with minimum and maximum
temperatures being –65
°C to +150 °C, respectively. Devices
are placed in a bath and cooled to minimum specified
temperature. After being held in the cold chamber for five
minutes minimum, the devices are transferred to an adjacent
chamber at the maximum specified temperature for an
equivalent time. Two five minute dwells plus two ten second
transitions constitute one cycle.
Temperature Humidity Bias (THB Motorola Std)
This stress is performed to accelerate the effects of
moisture penetration, with the dominant effect being
corrosion. Conditions employed during this test are a
temperature of 85
°C, humidity of 85% RH, and a nominal
bias level.
Pressure Temperature Humidity (PTH Motorola Std)
This stress is performed to accelerate the effects of
moisture penetration, with the dominant effect being
corrosion. This test detects similar failure mechanisms as
THB but at a greatly accelerated rate. Conditions employed
during this test are a temperature of 121
°C, pressure of
15psig or greater, humidity of 100% RH, unbiased.
Surface Mount Preconditioning (Motorola Std)
Preconditioning tests are performed to simulate the
customer board mount process where surface mount parts
are subjected to a high temperature for a short duration.
These tests detect mold compound delamination from the die
and leadframe which can result in reliability failures. The
dominant failure mechanism is corrosion, but other
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