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參數(shù)資料
| 型號： | MC10E241 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 |
| 中文描述： | 8位可掃描寄存器 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 107K |
| 代理商： | MC10E241 |
MC10E241 MC100E241
2–3
MOTOROLA
ECLinPS and ECLinPS Lite
DL140 — Rev 4
OUTLINE DIMENSIONS
FN SUFFIX
PLASTIC PLCC PACKAGE
CASE 776–02
ISSUE D
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.010 (0.250)
T L –M
S
N
S
S
0.007 (0.180)
T L –M
S
N
S
M
0.010 (0.250)
T L –M
S
N
S
S
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.004 (0.100)
SEATING
PLANE
-T-
12.32
12.32
4.20
2.29
0.33
0.66
0.51
0.64
11.43
11.43
1.07
1.07
1.07
—
2
°
10.42
1.02
12.57
12.57
4.57
2.79
0.48
0.81
—
—
11.58
11.58
1.21
1.21
1.42
0.50
10
°
10.92
—
1.27 BSC
A
B
C
E
F
G
H
J
K
R
U
V
W
X
Y
Z
G1
K1
MIN
0.485
0.485
0.165
0.090
0.013
MIN
MAX
0.495
0.495
0.180
0.110
0.019
MAX
INCHES
MILLIMETERS
DIM
NOTES:
1. DATUMS -L-, -M-, AND -N- DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIM G1, TRUE POSITION TO BE MEASURED
AT DATUM -T-, SEATING PLANE.
3. DIM R AND U DO NOT INCLUDE MOLD FLASH.
ALLOWABLE MOLD FLASH IS 0.010 (0.250)
PER SIDE.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP TO 0.012
(0.300). DIMENSIONS R AND U ARE
DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUDING ANY MISMATCH
BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037
(0.940). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMENSION TO BE
SMALLER THAN 0.025 (0.635).
VIEW S
B
U
Z
G1
X
VIEW D-D
H
K
F
VIEW S
G
C
Z
A
R
E
J
0.026
0.020
0.025
0.450
0.450
0.042
0.042
0.042
—
2
°
0.410
0.040
0.032
—
—
0.456
0.456
0.048
0.048
0.056
0.020
10
°
0.430
—
0.050 BSC
-N-
Y BRK
D
D
W
-M-
-L-
28
1
V
G1
K1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC10E241FN | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 |
| MC100E256FN | 3-BIT 4:1 MUX-LATCH |
| MC10E256 | Replaced by TPS2056A : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 |
| MC10E256FN | 3-BIT 4:1 MUX-LATCH |
| MC100E310FN | LOW VOLTAGE 2:8 DIFFERENTIAL FANOUT BUFFER |
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