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參數(shù)資料
| 型號： | MC100SP75 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.025 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | MC100SP75 |
MC100SP75
11/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VDSS
ID
IDM
VGS
VGSM
PD
TJ , TSTG
TL
IAR
EAR
EAS
Package Outline.
Dimensions in mm
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
100
75
300
±20
±30
255
2.4
–55 to 150
300
75
30
1500
V
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 0.53mH, RG = 25W, Peak IL = 75A
VDSS
100V
ID(cont)
75A
RDS(on) 0.025W
W
Faster Switching
Lower Leakage
100% Avalanche Tested
This Module consists of 6 StarMOS die in 3 phase
configuration.
StarMOS is a new generation of
high voltage N–Channel enhancement mode
power MOSFETs. This new technology minimises
the JFET effect, increases packing density and
reduces the on-resistance. StarMOS also achieves
faster switching speeds through optimised gate
layout.
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