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參數(shù)資料
| 型號： | MC1333 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 553K |
| 代理商： | MC1333 |
PR
EL
IM
IN
AR
Y
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 2
Copyright
2001
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MC1333 WAFFLE PACK DIE
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
D E S C R I P T I O N
The MC1333 is a low noise, high gain, discrete silicon bipolar
transistor, shipped in waffle pack.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
K E Y F E A T U R E S
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
!
LNA, Oscillator, Pre-Driver
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Device Current
200
mA
TJ
Junction Temperature
150
C
TSTG
Storage Temperature
-55 to +150
C
A
M
C
13
33
W
A
FF
LE
PA
C
K
D
IE
!
High FTau-5GHz
Low noise-2.5dB@500MHz
Gold Back Metal
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
BVCBO
IC = 1mA
IE = 0
30
V
BVCEO
IC = 5mA
IB = 0
18
V
IEBO
VEB = 2.5V
IC = 0
100
uA
hFE
VCE = 5 V
IC = 50mA
50
200
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
GHz
FTau
NF
G
NFmin
5.0
2.5
15.5
VCE = 10 V I = 75 mA
C
f = 500MHz
VCE = 10V I = 50 mA
C
f = 500MHz
VCE = 10V I = 50 mA
C
f
S 212
VCE = 10 V I = 50 mA
C
15
dB
= 500MHz
f = 500MHz
MC1333 DIE
14
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