參數資料
型號: MC-458CB641PS
廠商: NEC Corp.
英文描述: 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
中文描述: 800萬字,64位同步動態(tài)隨機存儲器模塊以便內存
文件頁數: 5/16頁
文件大?。?/td> 137K
代理商: MC-458CB641PS
Data Sheet M14015EJ4V0DS00
5
MC-458CB641ES, 458CB641PS
Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
4
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+
0.3
V
Low level input voltage
V
IL
–0.3
+
0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A11, BA0(A13), BA1(A12),
/RAS, /CAS, /WE
15
30
pF
C
I2
CLK0
23
37
C
I3
CKE0
15
26
C
I4
/CS0
15
26
C
I5
DQMB0 - DQMB7
5
10
Data input/output capacitance
C
I/O
DQ0 - DQ63
5
12
pF
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