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參數(shù)資料
| 型號： | MC-458CB646 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-Word By 64-BIT Dynamic RAM Module(8M×64位動態(tài)RAM模塊) |
| 中文描述： | 800萬字，64位動態(tài)RAM模塊（8米× 64位動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MC-458CB646 |
1997
MOS INTEGRATED CIRCUIT
MC-458CB646
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
The mark
shows major revised points.
Document No. M13049EJ3V0DS00 (3rd edition)
Date Published April 1998 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-458CB646 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M
SDRAM:
μ
PD4564841 (Revision E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-458CB646-A80
CL = 3
125 MHz
6
ns
3,888
mW
14.4
mW
CL = 2
100 MHz
6
ns
3,744
mW
(CMOS level input )
MC-458CB646-A10
CL = 3
100 MHz
6
ns
3,888
mW
CL = 2
77 MHz
7
ns
3,744
mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and full page
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-458CB647 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA727 | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA726EFB-A10 | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A10 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CA726EFB-A80 | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-458CB646EFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646EFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646PFB-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-458CB646XFB-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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