參數(shù)資料
型號: MBM29F160BE-55TR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M X 8/1M X 16) BIT
中文描述: 2M X 8 FLASH 5V PROM, 55 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 23/53頁
文件大?。?/td> 251K
代理商: MBM29F160BE-55TR
MBM29F160TE
-55/-70/-90
/MBM29F160BE
-55/-70/-90
23
If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be
erased again prior to programming.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not change the command registers.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE = V
IH
, or WE = V
IH
. To initiate a write, CE and WE must
be a logical zero while OE is a logical one.
Power-up Write Inhibit
Power-up of the devices with WE = CE = V
IL
and OE = V
IH
will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to read mode on power-up.
相關(guān)PDF資料
PDF描述
MBM29F160BE-70PFTN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-90PFTN 16M (2M X 8/1M X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F160BE-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE70TNLE1 制造商:Fujitsu 功能描述: