參數(shù)資料
型號(hào)： MBM29F160BE-55TR
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 16M (2M X 8/1M X 16) BIT
中文描述： 2M X 8 FLASH 5V PROM, 55 ns, PDSO48
封裝： PLASTIC, REVERSE, TSOP1-48
文件頁數(shù)： 16/53頁
文件大小： 251K
代理商： MBM29F160BE-55TR
MBM29F160TE
-55/-70/-90
/MBM29F160BE
-55/-70/-90
16
SPA : Sector Address to be protected. Set sector address (SA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD : Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector
addresses.
Notes: 1. This command is valid while fast mode.
2. Addresses from system set to A
0
to A
6
. The other addresses are “Don’t Care”.
3. The data "00H" is also acceptable.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in an improper sequence will reset the device to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
Read/Reset Command
The read or reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrive array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory contents occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufactures and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A
read cycle from address XX01H for
×
16 (XX02H for
×
8) retrieves the device code (MBM29F160TE = D2H and
Table 8 MBM29F160TE/BE Extended Command Definitions
Command
Sequence
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Set to Fast Mode
Word
3
555H
AAH
2AAH
55H
555H
20H
—
—
Byte
AAAH
555H
AAAH
Fast Program
(Note 1)
Word
2
XXXH
A0H
PA
PD
—
—
—
—
Byte
XXXH
Reset from Fast
Mode (Note 1)
Word
2
XXXH
90H
XXXH
F0H
(Note 3)
—
—
—
—
Byte
XXXH
XXXH
Query Command
(Note 2)
Word
2
55H
98H
—
—
—
—
—
—
Byte
AAH
相關(guān)PDF資料
PDF描述
MBM29F160BE-70PFTN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-90PFTN 16M (2M X 8/1M X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F160BE-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE70TNLE1 制造商:Fujitsu 功能描述:
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