參數(shù)資料
型號: MBM29F040A-90
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器)
中文描述: 4分(為512k × 8)位閃存Memoery(為512k × 8位5V的電源電壓閃速存儲器)
文件頁數(shù): 36/42頁
文件大?。?/td> 492K
代理商: MBM29F040A-90
36
MBM29F040A
-70/-90/-12
I
TYPICAL CHARACTERISTICS CURVES
4.5
5.0
5.5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
C
,
T
A
= +25
°
C
f = 6.0 MHz
V
CC
SUPPLY VOLTAGE
(V)
“H” LEVEL OUTPUT CURRENT vs.
“H” LEVEL OUTPUT VOLTAGE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
C
,
f FREQUENCY (MHz)
10
0.1
1
READ POWER SUPPLY CURRENT
(I
CC1
) vs. SUPPLY VOLTAGE
READ POWER SUPPLY CURRENT vs. FREQUENCY
45
40
35
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
V
OL
“L” LEVEL OUTPUT VOLTAGE (V)
t
ACC
vs. LOAD CAPACITANCE (C
L
)
I
O
“L” LEVEL OUTPUT CURRENT vs.
“L” LEVEL OUTPUT VOLTAGE
–45
–40
–35
–30
–25
–20
–15
–10
–5
0
0
1
2
3
4
5
V
OH
“H” LEVEL OUTPUT VOLTAGE (V)
t
ACC
vs. SUPPLY VOLTAGE (V
CC
)
I
O
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
CC
SUPPLY VOLTAGE (V)
t
A
,
V
CC
= 5.0 V
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
V
IN
= V
CC
/GND
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
C
L
LOAD CAPACITANCE (pF)
t
A
,
0
20
40
60
80
100
120
T
A
= +25
°
C
V
CC
= 5.0 V
T
A
= +25
°
C
4.5
5.5
5.0
相關(guān)PDF資料
PDF描述
MBM29F040A 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器)
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT