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參數(shù)資料
| 型號： | MBM29F040A-90 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲器) |
| 中文描述： | 4分（為512k × 8）位閃存Memoery（為512k × 8位5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 3/42頁 |
| 文件大小： | 492K |
| 代理商： | MBM29F040A-90 |
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MBM29F040A
-70/-90/-12
I
GENERAL DESCRIPTION
The MBM29F040A is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The
MBM29F040A is offered in a 32-pin PLCC and 32-pin TSOP package. This device is designed to be programmed
in-system with the standard system 5.0 V V
CC
supply. A 12.0 V V
The device can also be reprogrammed in standard EPROM programmers.
PP
is not required for write or erase operations.
The standard MBM29F040A offers access times between 70 ns and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F040A is pin and command set compatible with JEDEC standard 4M-bit E
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0 V Flash or EPROM devices.
2
PROMs. Commands are
The MBM29F040A is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which
is an internal algorithm that automatically preprograms the array if it is not already programmed before executing
the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell
margin.
A sector is typically erased and verified in 1 second (if already completely preprogrammed).
This device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory
to be erased and reprogrammed without affecting other sectors. The MBM29F040A is erased when shipped
from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
or by the Toggle Bit feature on DQ
6
. Once the end of a program or erase cycle has been completed, the device
internally resets to the read mode.
CC
detector automatically
7
Fujitsu's Flash technology combines years of EPROM and E
of quality, reliability and cost effectiveness. The MBM29F040A memory electrically erases the entire chip or all
bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot electron injection.
2
PROM experience to produce the highest levels
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F040A | 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲器) |
| MBM29F040C | 4M (512K X 8) BIT |
| MBM29F040C-55 | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85 |
| MBM29F040C-55PD | 4M (512K X 8) BIT |
| MBM29F040C-55PFTN | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F040A-90-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040C | 制造商:FUJRTSU 功能描述: |
| MBM29F040C-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
| MBM29F040C-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT |
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