參數(shù)資料
型號： MBB200GS6AW
元件分類： IGBT 晶體管
英文描述： 200 A, 600 V, N-CHANNEL IGBT
文件頁數(shù)： 2/4頁
文件大?。?/td> 120K
代理商： MBB200GS6AW
VGE
=15V14V13V12V
300
400
0
2
4
6
8
10
200
100
0
400
200
300
100
0
11V
TYPICAL
10V
9V
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=200A
Ic
=400A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic
=400A
Ic
=200A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
200
400
600
800
10000
TYPICAL
Vcc
=300V
Ic
=200A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
Gate Charge, QG (nc)
Gate charge characteristics
300
400
200
100
0
1
2
3
4
5
F
orw
ard
Current,
I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
0
2
4
6
8
10
11V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-B200GS6AW-0
Tc
=25°C
VGE
=15V14V13V12V
VGE
=0
Tc
=25°C
Tc
=125°C
Tc
=125°C
Tc
=25°C
Pc
=600W
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