參數(shù)資料
型號: MBDF1200ZEL
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TSSOP-8
文件頁數(shù): 1/10頁
文件大?。?/td> 187K
代理商: MBDF1200ZEL
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. EZFET
devices are designed for use
in low voltage applications where power efficiency is important.
Typical applications are Li–ion battery protection, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Zener Protected Gates Provide Electrostatic Discharge Protection
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature TSSOP–8 Surface Mount Package — Saves Board Space
IDSS Specified at Elevated Temperature
Mounting Information for TSSOP–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 12
Vdc
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Pulsed
ID
IDM
3.0
48
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
1.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Continuous Source Current (Diode Conduction) (2)
IS
1.25
Adc
THERMAL RESISTANCE
Rating
Symbol
Max
Unit
Thermal Resistance — Junction to Ambient (1)
R
θJA
125
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
(2) When mounted on FR–4 Board, t
≤ 10 sec.
DEVICE MARKING
ORDERING INFORMATION
D1200Z
Device
Reel Size
Tape Width
Quantity
D1200Z
MBDF1200ZEL
13
12 mm embossed tape
2000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBDF1200Z/D
Motorola, Inc. 1998
MBDF1200Z
DUAL TMOS
POWER MOSFET
3 AMPERES
20 VOLTS
RDS(on) = 38 mW
CASE 948J–01
TSSOP–8
Motorola Preferred Device
Drain–1
Source–1
Gate–1
1
2
3
4
8
7
6
5
Top View
Drain–2
Source–2
Gate–2
D
S
G
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