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參數(shù)資料
| 型號(hào)： | MBL800D33B |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 800 A, 3300 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | MBL800D33B |
PDE-L800D33B-0
IGBT MODULE
MBL800D33B
TENTATIVE SPECIFICATION
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C )
Item
Symbol
Unit
MBL800D33B
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
800
1ms
ICp
A
1,600
Forward Current
DC
IF
800
1ms
IFM
A
1,600
Collector Power Dissipation
Pc
W
8,000
Junction Temperature
Tj
°C
-40 ~ +125
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
5,400(AC 1 minute)
Screw Torque
Terminals(M4/M8)
-
2
/ 10
(1)
Mounting(M6)
-
N.m
6
(2)
Notes: (1)Recommended Value 1.8
±0.2/9±1N.m
(2)Recommended Value 5.5
±0.5N.m
CHARACTERISTICS
(Tc=25
°C )
1)IGBT + FWD
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
12.0
VCE=3,300V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
4.1
5.2
IC=800A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V
4.0
5.5
7.0
VCE=5V, IC =800mA
Input Capacitance
Cies
nF
-
100
-
VCE=10V,VGE=0V,f=100KHz
Rise Time
tr
-1.6
2.7
VCC=1,650V,Ic=800A
Turn On Time
ton
-
2.3
3.3
L=100nH
Fall Time
tf
-1.9
2.7
RG=4.7
W
(3)
Switching Times
Turn Off Time
toff
ms
-3.3
5.0
VGE=
±15V Tc=125°C
Peak Forward Voltage Drop
VFM
V-
2.2
3.1
-Ic=800A,VGE=0V
Reverse Recovery Time
trr
ms
-
0.7
1.3
Vcc=1,650V,IF=800A
(4)
L=100nH,Tc=125
°C
IGBT
Rth(j-c)
-
0.012
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.024
Junction to case
2)DIODE
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector Emitter Cut-Off Current
IAKS
mA
-
12.0
VAK=3,300V
Peak Forward Voltage Drop
VF
V-
2.4
3.3
IF=800A
Reverse Recovery Time
trr
ms
-0.7
1.3
IF=800A,VCC=1,650V
(4)
L=100nH,Tc=125
°C
Thermal Impedance
Rth(j-c)
°C/W
0.024 Junction to case
Notes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)
with appliance mounted.
(4) Counter arm IGBT
VGE=
-15V
Unit in mm
Weight: 1,200 (g)
6-M8
3-M4
8-
φ7
C
G
E
C(A)
E
E(K)
<TERMINALS>
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