參數(shù)資料
型號: MBB200GS6AW
元件分類: IGBT 晶體管
英文描述: 200 A, 600 V, N-CHANNEL IGBT
文件頁數(shù): 1/4頁
文件大?。?/td> 120K
代理商: MBB200GS6AW
PDE-B200GS6AW-0
IIIIG
G
GB
B
BT
TT
T M
M
MOD
OD
ODU
U
UL
LL
LE
E
MBB200GS6AW
Silicon N-channel IGBT
OUTLINE DRAWING
F
FF
FEA
EA
EAT
TT
TU
U
URE
RE
RES
SS
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item
Symbol
Unit
MBB200GS6AW
Collector Emitter Voltage
VCES
V
600
Gate Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
200
1ms
ICp
A
400
Forward Current
DC
IF
200
(1)
1ms
IFM
A
400
Collector Power Dissipation
Pc
W
600
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
VISO
VRMS
2,500(AC 1 minute)
Screw Torque
Terminals
-
1.37(14)
(2)
Mounting
-
N.m
(kgf.cm)
1.96(20)
(3)
Notes:(1)RMS Current of Diode 60Arms max.
(2)Recommended Value 1.18N.m(12kgf.cm)
(3)Recommended Value 1.67N.m(17kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
1.0 VCE=600V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
VCE(sat)
V-
1.9
2.6 IC=200A,VGE=15V
Gate Emitter Threshold Voltage
VGE(TO)
V-
-
10
VCE=5V, IC =200mA
Input Capacitance
Cies
pF
-
9,700
-
VCE=10V,VGE=0V,f=1MHz
Rise Time
tr
-0.3
0.5 VCC=300V
Turn On Time
ton
-0.4
0.6 RL=1.5W
Fall Time
tf
-
0.25
0.35 RG=12W
(4)
Switching Times
Turn Off Time
toff
ms
-0.6
0.9 VGE=±15V
Peak Forward Voltage Drop
VFM
V-
2.2
3.1 IF=200A,VGE=0V
Reverse Recovery Time
trr
ms-
-
0.3 IF=200A,VGE=-10V, di/dt=200A/ms
IGBT
Rth(j-c)
-
0.21
Thermal Impedance
FWD
Rth(j-c)
°C/W
--
0.5
Junction to case
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
94
80
8
4HOLES-
φ5.6
7HOLES-M4
0.75
19.5
86
74
18.5
7
φ0.8
4.5
(10)
24.5
12
37.5
TERMINAL#110
17.5
19.5
6.5
++
-
G1 E1
G2 E2
G3 E3
G4 E4 G5E5
G6 E6
Unit in mm
Weight: 460 (g)
TERMINALS
G1
G2
E1
E2
U
G3
G4
E3
E4
V
G5
G6
E5
E6
W
++
-
相關(guān)PDF資料
PDF描述
MBC13900 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MBDF1200ZEL 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MBDF1200ZEL 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MBL150GS6N 150 A, 600 V, N-CHANNEL IGBT
MBL150GS6P 150 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBB2147RC 制造商:Toshiba America Electronic Components 功能描述:2.5" 147 GB SAS 10K 16M - Bulk
MBB2-2442-084SA 功能描述:EMI/RFI 抑制器及鐵氧體 BANDPASS FILTER RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT
MBB230TZ-WPE 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:REFLECTOR COATING TYPE HIGH-PERFORMANCE LEDS
MBB2G25 制造商:PRO ELEC 功能描述:BACK BOX METAL 25MM 2GANG 制造商:PRO ELEC 功能描述:BACK BOX, METAL, 25MM, 2GANG
MBB2G35 制造商:PRO ELEC 功能描述:BACK BOX METAL 37MM 2GANG 制造商:PRO ELEC 功能描述:BACK BOX, METAL, 37MM, 2GANG 制造商:Pro Elec 功能描述:BACK BOX, METAL, 37MM, 2GANG; No. of Gangs:2; Internal Depth:35mm; Electrical Box Material:Steel; Electrical Box Mounting:Flush; For Use With:Electrical Outlet; Body Material:Steel; Enclosure Material:Steel; External Depth - ;RoHS Compliant: NA