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參數(shù)資料
| 型號(hào)： | MB85392A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 8M×32Bit Fast Page Mode DRAM Module(CMOS 8M×32位 快速頁(yè)面存取模式動(dòng)態(tài)RAM) |
| 中文描述： | 的CMOS 8米× 32Bit的快速頁(yè)面模式內(nèi)存的CMOS（8米× 32位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 320K |
| 代理商： | MB85392A-60 |
1
DS05-11210-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 8M
×
32
FAST PAGE MODE DRAM MODULE
MB85392A-60/-70
CMOS 4M
×
32 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85392A is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of sixteen MB8117400A devices. The MB85392A is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85392A are the
same as the MB8117400A which features fast page mode operation. For ease of memory expansion, the
MB85392A is offered in a 72-pad Single In-line Memory Module package (SIMM).
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ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
16
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:非易失 存儲(chǔ)器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲(chǔ)容量:4Mb （512K x 8） 時(shí)鐘頻率:5MHz 寫(xiě)周期時(shí)間 - 字，頁(yè):17ms 存儲(chǔ)器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類(lèi)型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標(biāo)準(zhǔn)包裝:1 |
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| MB85R1001_08 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
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