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參數(shù)資料
| 型號： | MB85502-015 |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步動態(tài)RAM) |
| 中文描述： | 8M X 36 SYNCHRONOUS DRAM MODULE, 14 ns, PZMA72 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 236K |
| 代理商： | MB85502-015 |
1
DS05-11203-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 8M
SYNCHRONOUS DRAM MODULE
×
36 Bit
MB85502-012/-015
CMOS 8M
×
36 Bit Synchronous DRAM Module
I
DESCRIPTION
The Fujitsu MB85502 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM)
module consisting of eighteen MB81116421 devices which organized as two banks of 2,097,152-word
The MB85502 organized as 8,388,608
×
36-bit is optimized for those applications requiring high speed, high
performance, large memory shortage, and high density memory organizations.
This module is ideally suited for supercomputers, workstations, laser printers, high resolution graphic adapters,
accelerators and other applications where a simple interface is needed.
The all inputs/ outputs are LVTTL compatible, and supply voltage tolerance is
×
4-bit.
±
9%.
I
ABSOLUTE MAXIMUM RATINGS (See NOTE)
*1 V
SS
= 0 V
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
OUT
I
OUT
P
T
STG
Value
Unit
V *1
V *1
V *1
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +4.6
–0.5 to +4.6
–0.5 to +4.6
±
50
24
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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| MB85R1002 | Memory FRAM |
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| MB86290A | Graphics Controller Hardware Specifications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲容量:4Mb （512K x 8） 時鐘頻率:5MHz 寫周期時間 - 字，頁:17ms 存儲器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標準包裝:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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