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參數(shù)資料
| 型號(hào)： | MB85396A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步動(dòng)態(tài)RAM) |
| 中文描述： | 4米× 36Bit的CMOS同步動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器（SDRAM）的CMOS（4分× 36位同步動(dòng)態(tài)RAM）的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 232K |
| 代理商： | MB85396A-60 |
1
DS05-11205-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
×
36
MB85396A-60/-70
CMOS 4M
×
36 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85396A is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of eight MB8117400A devices and four MB814100C devices. The MB85396A is optimized for those applications
requiring high speed, high performance and large memory storage. The operation and electrical characteristics
of the MB85396A are the same as the MB8117400A which features fast page mode operation. For ease of
memory expansion, the MB85396A is offered in a 72-pad Single In-line Memory Module package (SIMM).
I
ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V*1
V*1
V*1
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
±
50
12
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相關(guān)PDF資料 |
PDF描述 |
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| MB85396A-70 | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步動(dòng)態(tài)RAM) |
| MB85502-012 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步動(dòng)態(tài)RAM) |
| MB85502-015 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步動(dòng)態(tài)RAM) |
| MB85R1002 | Memory FRAM |
| MB85R1002PFTN | Memory FRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:RAM 技術(shù):ReRAM（電阻式 RAM） 存儲(chǔ)容量:4Mb （512K x 8） 時(shí)鐘頻率:5MHz 寫周期時(shí)間 - 字，頁:17ms 存儲(chǔ)器接口:SPI 電壓 - 電源:1.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOP 標(biāo)準(zhǔn)包裝:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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