參數(shù)資料
型號: MB84VD2009
廠商: Fujitsu Limited
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: 8米(× 16)閃存
文件頁數(shù): 25/30頁
文件大?。?/td> 393K
代理商: MB84VD2009
25
MB84VD2008
-10
/MB84VD2009
-10
Write Cycle (Note 4) (CEs control) (SRAM)
t
WC
t
AS
t
WP
t
WR
t
CW
t
ODW
t
COE
t
DS
t
DH
VALID DATA IN
ADDRESSES
WE
CE
S
D
OUT
D
IN
Notes:
2. If CEs goes LOW coincident with or after WE goes LOW, the output will remain at high
impedance.
3. If CEs goes HIGH coincident with or before WE goes HIGH, the output will remain at
high impedance.
4. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
5. Because I/O signals may be in the output state at this Time, input signals of reverse
polarity must not be applied.
Note 5
Note 5
UB, LB
t
BW
t
BE
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