參數(shù)資料
型號(hào): MB814400A-60
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 4米× 1位快速頁(yè)面模式的DRAM的CMOS(4分× 1位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 21/27頁(yè)
文件大?。?/td> 347K
代理商: MB814400A-60
21
MB814400A-60/MB814400A-70/MB814400A-80
Fig. 16 – TEST MODE SET CYCLE (A
0
to A
9
, OE = “H” or “L”)
V
IH
V
IL
D
OUT
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
WE
CAS
RAS
HIGH-Z
“H” or “L”
DESCRIPTION
Test Mode ;
The purpose of this test mode is to reduce device test time to one eighth of that required to test the device conventionally.
The test mode function is entered by performing a WE and CAS-before-RAS (WCBR) refresh for the entry cycle.
In the test mode, read and write operations are executed in units of eights bits which are selected by the address combination of
RA
10
, CA
0
and CA
10
. In the write mode, data at D
IN
is written into eight cells simultaneously. But the data must be input from DQ
2
only. In the read mode, the data of eight cells at the selected addresses are read back out from DQ and checked in the following
manner.
When the eight bits are all ”L” or all ”H”, a ”H” level is output.
When the eight bits show a combination of ”L” and ”H”, a ”L” level is output.
The test mode function is exited by performing a RAS-only refresh or a CAS-before-RAS refresh for the exit cycle.
In test mode operation, the following parameters are delayed approximately 5 ns from the specified value in the data sheet.
t
RC
, t
RWC
, t
RAC
, t
AA
, t
RAS
, t
CSH
, t
RAL
, t
RWD
, t
AWD
, t
PC
, t
PRWC
, t
CPA
, t
RHCP
, t
CPWD
t
RC
t
RAS
t
RP
t
RPC
t
CHR
t
CSR
t
CPN
t
WSR
t
WHR
t
OFF
t
OH
相關(guān)PDF資料
PDF描述
MB814400A-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400C-60 CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400C-70 CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814400D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
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