參數(shù)資料
型號: MB814265-60
廠商: Fujitsu Limited
英文描述: CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 256K × 16位的超頁模式動態(tài)RAM的CMOS(256K × 16位超級頁面存取模式動態(tài)內存)
文件頁數(shù): 7/28頁
文件大?。?/td> 364K
代理商: MB814265-60
7
MB814265-60/MB814265-70
I
DC CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Notes 3
Parameter
Notes
Symbol
Conditions
Value
Unit
Min.
Max.
Output high voltage
V
OH
I
OH
= –5.0 mA
2.4
V
Output low voltage
V
OL
I
OL
= +4.2 mA
0.4
Input leakage current (any input)
I
I(L)
0 V
V
IN
5.5 V;
4.5 V
V
CC
5.5 V;
V
SS
= 0 V; All other pins
not under test = 0 V
–10
10
μ
A
Output leakage current
I
DQ(L)
0 V
V
OUT
5.5 V;
Data out disabled
–10
10
Operating current
(Average power
supply current)
MB814265-60
I
CC1
RAS, LCAS & UCAS cycling;
t
RC
= min
95
mA
MB814265-70
84
Standby current
(Power supply
current)
TTL level
I
CC2
RAS = LCAS = UCAS = V
IH
2.0
mA
CMOS level
RAS = LCAS = UCAS
V
CC
–0.2 V
1.0
Refresh current #1
(Average power
supply current)
MB814265-60
I
CC3
LCAS = UCAS = V
IH
, RAS cycling;
t
RC
= min
95
mA
MB814265-70
84
Hyper page mode
current
MB814265-60
I
CC4
RAS = V
IL
, LCAS / UCAS cycling;
t
HPC
= min
95
mA
MB814265-70
84
Refresh current #2
(Average power
supply current)
MB814265-60
I
CC5
RAS cycling;
CAS-before-RAS;
t
RC
= min
95
mA
MB814265-70
84
1
1
2
2
2
2
相關PDF資料
PDF描述
MB814265-70 CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級頁面存取模式動態(tài)RAM)
MB814400A-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM)
MB814400A-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM)
MB814400A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM)
MB814400C-60 CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速頁面存取模式動態(tài)RAM)
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