參數(shù)資料
型號(hào)： MB81164442A-67L
廠商： Fujitsu Limited
英文描述： CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
中文描述： 的CMOS 4 × 4米× 16位同步動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器（SDRAM）（的CMOS 4 × 4米× 16位同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 43/46頁(yè)
文件大?。?/td> 642K
代理商： MB81164442A-67L
43
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
TIMING DIAGRAM – 15 : AUTO-REFRESH TIMING
t
RC
(min)
t
RC
(min)
CLK
Command
BA
REF
Command
NOP
BA
1
NOP
NOP
REF
NOP
4
DON’T CARE
Notes:
1.
All banks should be precharged prior to the first Auto-refresh command (REF).
Bank select is ignored at REF command. The refresh address and bank select are selected by internal refresh counter.
Either NOP or DESL command should be asserted during t
RC
period while Auto-refresh mode.
Any activation command such as ACTV or MRS command other than REF command should be asserted after t
RC
from
the last REF comand.
2.
3.
4.
3
DON’T CARE
TIMING DIAGRAM – 16 : SELF-REFRESH ENTRY AND EXIT TIMING
t
RC
(min)
t
PDE
(min)
CLK
CKE
Command
NOP
Notes:
1.
Precharge command (PRE or PALL) should be asserted if any bank is active prior to Self-refresh Entry command (SELF).
SELF command should be asserted after the last read data have been appeared on DQ.
The Self-refresh Exit command (SELFX) is latched after t
PDE
(min). It is recommended to apply NOP command in
conjunction with CKE.
Either NOP or DESL command can be used during t
RC
period.
CKE should be held high within one t
RC
period after t
PDE
.
2.
3.
4.
5.
SELF
DON’T CARE
SELFX
Command
NOP
3
NOP
4
1
t
SI
(min)
2
相關(guān)PDF資料
PDF描述
MB81164442A-84 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-84L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB8117400A-50 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
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MB8117400A-70 CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
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