參數(shù)資料
型號(hào): MAX5949BESA+T
廠商: Maxim Integrated
文件頁(yè)數(shù): 2/18頁(yè)
文件大?。?/td> 186K
描述: IC CNTRLR HOT SWAP 8-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
類(lèi)型: 熱交換控制器
應(yīng)用: 通用
內(nèi)部開(kāi)關(guān): 無(wú)
電源電壓: -20 V ~ -80 V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
-48V Hot-Swap Controllers
with External R
SENSE
2  _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
EE
= 0V, V
DD
= 48V, T
A
= -40癈 to +85癈. Typical values are at T
A
= +25癈, unless otherwise noted.) (Notes 2, 5)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages are referenced to V
EE
, unless otherwise noted.)
Supply Voltage (V
DD
- V
EE
).................................-0.3V to +100V
PWRGD, PWRGD .................................................-0.3V to +100V
DRAIN (Note 1)........................................................-2V to +100V
PWRGD to DRAIN .............................................& -0.3V to +95V
PWRGD to V
DD
........................................................-95V to +85V
SENSE (Internally Clamped) .................................-0.3V to +1.0V
GATE (Internally Clamped) ....................................-0.3V to +18V
UV and OV..............................................................-0.3V to +60V
Current Through SENSE...................................................?0mA
Current into GATE...........................................................?00mA
Current into DRAIN .........................................-100mA to +20mA
Current into Any Other Pin................................................?0mA
Continuous Power Dissipation (T
A
= +70癈)
8-Pin SO (derate 5.9mW/癈 above +70癈)..................471mW
Operating Temperature Range ...........................-40癈 to +85癈
Junction Temperature .....................................................+150癈
Storage Temperature Range.............................-65癈 to +150癈
Lead Temperature (soldering, 10s).................................+300癈
Soldering Temperature (reflow) .......................................+260癈
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Operating Input Voltage Range
V
DD
20
80
V
Supply Current
I
DD
(Note 3)
0.7
2
mA
GATE DRIVE AND CLAMPING CIRCUITS
GATE Pin Pullup Current
I
PU
Gate drive on, V
GATE
 = V
EE
-30
-45
-60
礎(chǔ)
GATE Pin Pulldown Current
I
PD
Gate drive off, V
GATE
 = 2V, T
A
 = +25癈
24
50
70
mA
External Gate Drive
V
GATE
V
GATE
 - V
EE
, 20V d V
DD
 d 80V
10
13.5
18
V
GATE to V
EE
 Clamp Voltage
V
GSCLMP
V
GATE
 - V
EE
, I
GS
 = 30mA
15
16.4
18
V
CIRCUIT BREAKER
Current-Limit Trip Voltage
V
CL
V
CL
 = V
SENSE
 - V
EE
40
50
60
mV
SENSE Input Bias Current
I
SENSE
V
SENSE
 = 50mV
0
-0.2
-2
礎(chǔ)
UNDERVOLTAGE LOCKOUT
Internal Undervoltage-Lockout
Voltage High
V
UVLOH
V
DD
 increasing
13.8
15.4
17.0
V
Internal Undervoltage-Lockout
Voltage Low
V
UVLOL
V
DD
 decreasing
11.8
13.4
15.0
V
UV PIN
UV High Threshold
V
UVH
UV voltage increasing
1.240
1.255
1.270
V
UV Low Threshold
V
UVL
UV voltage decreasing
1.105
1.125
1.145
V
UV Hysteresis
V
UVHY
130
mV
UV Input Bias Current
I
INUV
V
UV
 = V
EE
0
-0.5
礎(chǔ)
OV PIN
OV High Threshold
V
OVH
OV voltage increasing
1.235
1.255
1.275
V
OV Low Threshold
V
OVL
OV voltage decreasing
1.210
1.235
1.255
V
OV Hysteresis
V
OVHY
20
mV
OV Input Bias Current
I
INOV
V
OV
 = V
EE
0
-0.5
礎(chǔ)
Note 1:   Test condition per Figure 1. DRAIN current must be limited to the specified 100mA maximum.
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