參數(shù)資料
型號(hào): MAT03-000C
廠(chǎng)商: ANALOG DEVICES INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: 70 MIL X 60 MIL DIE-6
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 139K
代理商: MAT03-000C
MAT03
ASD0012816 Rev. F | Page 3 of 5
Table II Notes:
1/ VCB = -15V, IC = 10A, unless otherwise specified.
2/ Current gain match (
h
FE ) is defined as: hFE =
C
FE
B
I
min
h
)
I
(
100
.
3/ Guaranteed by VOS test
V
<<
V
for
T
V
TCV
BE
OS
T = 298
°K for T
A = +25°C.
Table II - Electrical Characteristics for Qual Samples
Parameter
Symbol
Conditions
1/
Sub-
groups
Limit
Min
Limit
Max
Units
1
90
IC =1mA; VCB = 0V,-36V
2, 3
60
IC =100A,VCB =0V,-36V
1
80
IC =100A, VCB =-36V
2, 3
50
IC =10A; VCB = 0V,-36V
1
70
Current Gain
hFE
IC =10A; VCB = -36V
2, 3
40
Current Gain Match 2/
h
FE
IC = 100A; VCB = 0V
1
3
%
1
120
Offset Voltage
VOS
VCB = 0V
2, 3
180
V
Change in Offset Voltage vs.
Temperature 3/
TCVOS
VCB = 0V
0.5
V/°C
Offset Voltage Change vs.
VCB
V
OS
/
V
CB
VCB = 0V, -36V
1
170
V
Offset Voltage Change vs.
Collector Current
V
OS /IC
IC1 = 10A, IC2 = 1mA,
VCB =0V
1
70
V
Input Offset Current
IOS
VCB = 0V, IC = 100A
1
55
nA
Bulk Emitter Resistance
rBE
1
0.9
Collector Base Leakage
Current
ICBO
VCB = -36V
1
250
pA
Collector Saturation Voltage VCESAT
IC = 1mA, IB = 100A
1
0.1
V
Breakdown Voltage
BVCEO
1
36
V
相關(guān)PDF資料
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MAT03ARC/883 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MAT-03ARC/883 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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