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參數(shù)資料
| 型號： | MAT03-000C |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 70 MIL X 60 MIL DIE-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MAT03-000C |
MAT03
ASD0012816 Rev. F | Page 2 of 5
3.3
Absolute Maximum Ratings 1/
Collector to Base Voltage (BVCBO) .................................. 36V
Collector to Emitter Voltage (BVCEO) .............................. 36V
Collector to Collector Voltage (BVCC) ............................. 36V
Emitter to Emitter Voltage (BVEE) ................................... 36V
Collector Current (IC) ........................................................ 20mA
Emitter Current (IE) ........................................................... 20mA
Junction Temperature (TJ)..................................................
+150°C
Ambient Operating Temperature Range............................. -55°C to +125°C
Storage Temperature Range .............................................. -65
°C to +150°C
Absolute Maximum Ratings Notes:
1/ Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
4.0
Die Qualification
In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as
modified herein.
(a) Qual Sample Size and Qual Acceptance Criteria – 25/2
(b) Qual Sample Package – 6 Lead Can Package (TO)
(c) Pre-screen electrical test over temperature performed post-assembly prior to die
qualification.
Table I Notes:
1/ VCB = -15V, IC = 10A, TA = 25°C, unless otherwise specified.
2/ Current gain match (hFE) is defined as: hFE =
C
FE
B
I
min
h
)
I
(
100
.
Table I - Dice Electrical Characteristics
Parameter
Symbol
Conditions
1/
Limit
Min
Limit
Max
Units
IC =1mA; VCB = 0V, -36V
100
IC =100A,VCB =0V,-36V
90
Current Gain
hFE
IC =10A; VCB = 0V,-36V
80
Current Gain Match 2/
h
FE
IC = 100A; VCB = 0V
3
%
Offset Voltage
VOS
VCB = 0V
100
V
Offset Voltage Change vs.
VCB
V
OS
/
V
CB
VCB = 0V, -36V
150
V
Offset Voltage Change vs.
Collector Current
V
OS /IC
IC1 = 10A, IC2 = 1mA,
VCB = 0V
50
V
Input Offset Current
IOS
VCB = 0V, IC = 100A
35
nA
Bulk Emitter Resistance
rBE
0.75
Collector Base Leakage
Current
ICBO
VCB = -36V
200
pA
Collector Saturation Voltage VCESAT
IC = 1mA, IB =100A
0.1
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT03AH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03AH/883C | 制造商:Rochester Electronics LLC 功能描述:HI-SPEED DUAL PNP TRANS-L - Bulk |
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
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