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參數(shù)資料
| 型號： | MAPR-001011-850S00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 158K |
| 代理商： | MAPR-001011-850S00 |
Avionics Pulsed Power Transistor
850W, 1025-1150 MHz, 10s Pulse, 1% Duty
MAPR-001011-850S00
M/A-COM Products
Released, 30 May 07
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
RF Power Transfer Curve
(Output Power Vs. Input Power)
F (MHz)
ZIF ()
ZOF ()
1025
1.7 - j1.8
0.8 - j1.3
1090
1.4 - j1.2
0.8 - j1.0
1150
1.3 - j0.7
0.8 - j0.8
Broadband Test Fixture Impedance
400
600
800
1000
1200
70
90
110
130
150
170
Pin (watts)
Po
u
t(
w
a
tt
s
)
1025 MHz
1090 MHz
1150 MHz
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PDF描述 |
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| MAPR-001090-350S00 | L BAND, Si, NPN, RF POWER TRANSISTOR |
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| MAPRST0912-350 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAPRST1030-1KS | L BAND, Si, NPN, RF POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPR-001090-350S00 | 制造商:M/A-COM Technology Solutions 功能描述:TRANSISTOR,350WPK,1.09GHZ - Bulk |
| MAPR-002729-170M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-002731-115M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-1090-350S0 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MAPRST0002 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty |
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