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參數(shù)資料
| 型號： | MAPR-001011-850S00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 158K |
| 代理商： | MAPR-001011-850S00 |
Avionics Pulsed Power Transistor
850W, 1025-1150 MHz, 10s Pulse, 1% Duty
MAPR-001011-850S00
M/A-COM Products
Released, 30 May 07
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Gain vs. Frequency
Typical RF Performance
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
ΔGain
(dB)
Ic
(A)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(5:1)
P1dB Overdrive
Pout
Δ Po
1025
116
850
8.67
-
35.3
48.2
-18.3
S
P
974
0.59
1090
117
850
8.61
33.9
50.3
-16.3
S
-
1014
0.76
1150
112
850
8.42
32.1
53.0
-21.1
S
-
997
0.69
-
0.25
Note:
ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pout=850W.
Collector Efficiency vs. Frequency
7.4
7.8
8.2
8.6
9.0
9.4
1000
1050
1100
1150
1200
Fre q (M Hz)
G
ain
(
d
B
)
30
36
42
48
54
60
1000
1050
1100
1150
1200
Fre q (M Hz)
E
ff
ici
en
cy
(
%
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPR-001090-350S00 | 制造商:M/A-COM Technology Solutions 功能描述:TRANSISTOR,350WPK,1.09GHZ - Bulk |
| MAPR-002729-170M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-002731-115M00 | 功能描述:射頻MOSFET電源晶體管 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MAPR-1090-350S0 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MAPRST0002 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty |
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