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參數(shù)資料
| 型號(hào)： | MAPLST0822-002PP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, FP-16 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 259K |
| 代理商： | MAPLST0822-002PP |
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
4
Graph 1. W-CDMA: Gain and Efficiency
versus Output Power
Graph 2. W-CDMA: ACPR versus Output
Power
Graph 3. CW: Gain and Efficiency
versus Output Power
Graph 4. Two Tone: Intermodulation
Distortion versus Output Power
28V
DC, IDQ=35mA, 2.17GHz
3GPP W-CDMA,
Test Model 1 w /16DPCH
11
12
13
14
15
16
18 20 21 22 23 24 25 26 27 28
P
OUT (dBm Avg.)
Gain(dB)
0
5
10
15
20
25
Efficiency
(%)
28VDC, IDQ=35mA
3GPP WCDMA,
Test Model 1 w /16DPCH
-55
-53
-51
-49
-47
-45
-43
-41
18 19 20 21 22 23 24 25 26 27 28
P
OUT(dBm Avg.)
ACPR(dBc)
ACPR (2.17GHz)
ACPR (2.14GHz)
ACPR (2.11GHz)
28V
DC, IDQ=35mA
6
7
8
9
10
11
12
13
14
15
16
18 20 22 24 26 28 30 32 33 34 35
P
OUT dBm
Gain(dB)
0
10
20
30
40
50
E
ff
iciency
(%
)
28V
DC, IDQ=35mA
2-Tone, 100kHz Spacing
-65
-60
-55
-50
-45
-40
-35
-30
-25
18
20
22
24
26
28
30
32
P
OUT(dBm Avg.)
IMD
(dBc
)
IM 3 (2.17GHz)
IM 3 (2.14GHz)
IM 3 (2.11GHz)
IM 5 (2.17GHz)
IM 5 (2.14GHz)
IM 5 (2.11GHz)
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| MAPLST1820-030CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1820-060CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPLST1617-030CF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE POWER FET TRANSISTOR, 30W, 1600-1700 MHZ, 28V - Bulk |
| MAPLST1820-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V |
| MAPLST1820-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V |
| MAPLST1820-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V |
| MAPLST1900-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V |
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