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參數(shù)資料
| 型號： | MAPLST0822-002PP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, FP-16 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MAPLST0822-002PP |
RF Power Field Effect Transistor
LDMOS, 800—2200 MHz, 2W, 28V
Designed for broadband commercial
applications up to 2.2GHz
High Gain, High Efficiency and High
Linearity
Ease of Design for Gain and Insertion Phase
Flatness
Excellent Thermal Stability
W-CDMA Performance at 2.17GHz, 28Vdc
Average Output Power: 28dBm @ -39dBc
ACPR
Gain: 14.5dB (typ.)
Efficiency: 23% (typ.)
10:1 VSWR Ruggedness at 2W (CW), 28V,
2.11GHz
Performance at 960MHz, 26Vdc, P1dB
Average Output Power: 2W min.
Gain: 20dB (typ.)
Efficiency: 50% (typ.)
10:1 VSWR Ruggedness at 2W, 26V,
960MHz
MAPLST0822-002PP
Package Style
4/14/05
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
V
DSS
65
Vdc
Gate—Source Voltage
V
GS
+15, -0.5
Vdc
Total Power Dissipation @ TC = 25 °C
P
D
6.9
W
Storage Temperature
T
STG
-65 to +150
°C
Junction Temperature
T
J
150
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
18
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
PFP-16
Features
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| MAPLST1820-030CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MAPLST1617-030CF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE POWER FET TRANSISTOR, 30W, 1600-1700 MHZ, 28V - Bulk |
| MAPLST1820-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V |
| MAPLST1820-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V |
| MAPLST1820-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V |
| MAPLST1900-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V |
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