- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95877 > MAPLST0822-002PP UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MAPLST0822-002PP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, FP-16 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MAPLST0822-002PP |
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
3
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W)
GP
—
15
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W)
EFF ()
—
45
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W)
IRL
—
-11
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture shown in Figure 12)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W)
GP
—
20
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W)
EFF ()
—
50
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W)
IRL
—
-12
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W)
GP
—
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W)
EFF ()
—
38
—
%
Input Return Loss
(VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W)
IRL
—
-9
—
dB
Output VSWR Tolerance
(VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture shown in Figure 10)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W)
GP
—
14.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W)
EFF ()
—
40
—
%
Input Return Loss
(VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W)
IRL
—
-10
—
dB
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAPLST1617-030CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1819-060CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1820-030CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1820-060CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1820-090CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPLST1617-030CF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE POWER FET TRANSISTOR, 30W, 1600-1700 MHZ, 28V - Bulk |
| MAPLST1820-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V |
| MAPLST1820-060CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V |
| MAPLST1820-090CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V |
| MAPLST1900-030CF | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。