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參數(shù)資料
| 型號： | MAPL-000817-015C00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 246K |
| 代理商： | MAPL-000817-015C00 |
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
7
Graph 3. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power
Graph 4. 1620, 1670MHz: 2 Tone Intermodulation Distortion vs. Output Power
CW, 26V, IDQ=100mA
0
2
4
6
8
10
12
14
16
18
20
30
32
34
36
38
40
42
Pout (dBm)
Ga
in
(
d
B
)
10
15
20
25
30
35
40
45
50
55
60
D
rai
n
E
ff
ic
ien
cy
(%
)
Gain 1670MHz
Gain 1620MHz
Eff. 1670MHz
Eff. 1620MHz
CW, 26V, IDQ=100mA
0
2
4
6
8
10
12
14
16
18
20
30
32
34
36
38
40
42
Pout (dBm)
Ga
in
(
d
B
)
10
15
20
25
30
35
40
45
50
55
60
D
rai
n
E
ff
ic
ien
cy
(%
)
Gain 1670MHz
Gain 1620MHz
Eff. 1670MHz
Eff. 1620MHz
26V, 1670MHz, 100kHz Tone Spacing
-70
-60
-50
-40
-30
-20
-10
0
33
34
35
36
37
38
39
Pout Avg (dBm)
IM
D
(
d
B
c
)
IMD3 100mA
IMD5 100mA
IMD3 160mA
IMD5 160mA
26V, 1670MHz, 100kHz Tone Spacing
-70
-60
-50
-40
-30
-20
-10
0
33
34
35
36
37
38
39
Pout Avg (dBm)
IM
D
(
d
B
c
)
IMD3 100mA
IMD5 100mA
IMD3 160mA
IMD5 160mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPL-000817-015CPC | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V |
| MAPL-000817-015CPC-072706 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V |
| MAPL-000822-002PP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V |
| MAPL-000978-0075LF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE TRANSISTOR - Bulk |
| MAPL-000978-0075LN | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty |
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