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參數(shù)資料
| 型號(hào)： | MAPL-000817-015C00 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | MAPL-000817-015C00 |
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
6
Graph 1. 925, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power
Graph 2. 925, 960 MHz: 2 Tone Intermodulation Distortion vs. Output Power
CW, 26V, IDQ=100mA
12
13
14
15
16
17
18
19
20
30
32
34
36
38
40
42
44
Pout (dBm)
Ga
in
(d
B
)
0
10
20
30
40
50
60
70
80
D
ra
in
E
ff
ici
enc
y
(%
)
Gain 960 MHz
Gain 925 MHz
Eff. 960MHz
Eff. 925 MHz
CW, 26V, IDQ=100mA
12
13
14
15
16
17
18
19
20
30
32
34
36
38
40
42
44
Pout (dBm)
Ga
in
(d
B
)
0
10
20
30
40
50
60
70
80
D
ra
in
E
ff
ici
enc
y
(%
)
Gain 960 MHz
Gain 925 MHz
Eff. 960MHz
Eff. 925 MHz
26V, IDQ=100mA, 100kHz Tone Spacing
-70
-60
-50
-40
-30
-20
-10
20
25
30
35
40
Pout (dBm)
IM
D
(
d
Bc
)
IMD3 (960 MHz)
IMD5 (960MHz)
IMD3(925MHz)
IMD5(925MHz)
26V, IDQ=100mA, 100kHz Tone Spacing
-70
-60
-50
-40
-30
-20
-10
20
25
30
35
40
Pout (dBm)
IM
D
(
d
Bc
)
IMD3 (960 MHz)
IMD5 (960MHz)
IMD3(925MHz)
IMD5(925MHz)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAPL-000817-015CPC | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V |
| MAPL-000817-015CPC-072706 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V |
| MAPL-000822-002PP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V |
| MAPL-000978-0075LF | 制造商:M/A-COM Technology Solutions 功能描述:LDMOS RF LINE TRANSISTOR - Bulk |
| MAPL-000978-0075LN | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty |
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