參數(shù)資料
型號： MAC7121MAG50
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： Microcontroller Family Hardware Specifications
中文描述： 微控制器系列硬件規(guī)格
文件頁數(shù)： 12/56頁
文件大?。?/td> 471K
代理商： MAC7121MAG50
MAC7100 Microcontroller Family Hardware Specifications, Rev. 1.2
Preliminary
Electrical Characteristics
Freescale Semiconductor
12
Table 15. MAC71
x
1/6
1
Device Supply Current Characteristics – 40 MHz
NOTES:
1. MAC71
x
2 characteristics are to be determined (TBD).
2. 85
°
C, 105
°
C, and 125
°
C refer to the "C", "V", and "M" Temperature Options, respectively.
3. RTI disabled / enabled.
Conditions shown in
Table 7
, with
f
SYS
= 40 MHz.
Num
C
Rating
Symbol
Typ
Max
Unit
F1
P Run Supply Current, Single Chip
I
DD
R
reg
100
130
mA
F2
C Doze Supply Current
I
DD
D
reg
Run
≥
Doze
≥
Pseudo Stop
F3
P Pseudo Stop Supply Current
(OSC on)
P
–40
°
C
2
I
DD
PS
reg
400 / 500
3
600 / 700
3
μ
A
25
°
C
2
400 / 500
3
600 / 700
3
μ
A
C
85
°
C
2
800 / 1000
3
2000 / 2500
3
μ
A
C
105
°
C
2
1200 / 1500
3
3500 / 4000
3
μ
A
P
125
°
C
2
1500 / 2000
3
5500 / 6000
3
μ
A
F4
P Stop Supply Current
(T
J
= T
A
assumed)
P
–40
°
C
2
I
DD
S
reg
30
150
μ
A
25
°
C
2
30
150
μ
A
C
85
°
C
2
330
2500
μ
A
C
105
°
C
2
470
3500
μ
A
P
125
°
C
2
660
5000
μ
A
Table 16. MAC71
x
1/6
1
Device Supply Current Characteristics – 50 MHz
NOTES:
1. MAC71
x
2 characteristics are to be determined (TBD).
2. 85
°
C, 105
°
C, and 125
°
C refer to the "C", "V", and "M" Temperature Options, respectively.
3. RTI disabled / enabled.
Conditions shown in
Table 7
, with
f
SYS
= 50 MHz.
Num
C
Rating
Symbol
Typ
Max
Unit
G1
P Run Supply Current, Single Chip
I
DD
R
reg
120
150
mA
G2
C Doze Supply Current
I
DD
D
reg
Run
≥
Doze
≥
Pseudo Stop
G3
P Pseudo Stop Supply Current
(OSC on)
P
–40
°
C
2
I
DD
PS
reg
400 / 500
3
600 / 700
3
μ
A
25
°
C
2
400 / 500
3
600 / 700
3
μ
A
C
85
°
C
2
800 / 1000
3
2000 / 2500
3
μ
A
C
105
°
C
2
1200 / 1500
3
3500 / 4000
3
μ
A
P
125
°
C
2
1500 / 2000
3
5500 / 6000
3
μ
A
G4
P Stop Supply Current
(T
J
= T
A
assumed)
P
–40
°
C
2
I
DD
S
reg
30
150
μ
A
25
°
C
2
30
150
μ
A
C
85
°
C
2
330
2500
μ
A
C
105
°
C
2
470
3500
μ
A
P
125
°
C
2
660
5000
μ
A
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