參數(shù)資料
型號: MAC4DCNT4
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 4 A, TRIAC
封裝: PLASTIC, CASE 369C, DPAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 156K
代理商: MAC4DCNT4
4
Motorola Thyristor Device Data
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+)
Figure 10. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(–)
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(–)
75
125
–50
TJ, JUNCTION TEMPERATURE (
°
C)
60
20
TJ, JUNCTION TEMPERATURE (
°
C)
25
125
–50
40
20
0
1000
10 K
100
RGK, GATE–MT1 RESISTANCE (OHMS)
10 K
8.0 K
6.0 K
4.0 K
2.0 K
0
RGK, GATE–MT1 RESISTANCE (OHMS)
100
15 K
10 K
5.0 K
0
500
600
400
VPK, PEAK VOLTAGE (VOLTS)
10 K
6.0 K
4.0 K
2.0 K
0
VPK, PEAK VOLTAGE (VOLTS)
400
14 K
12 K
6.0 K
2.0 K
0
600
I
I
L
S
S
10
0
–25
0
25
50
100
–25
0
80
100
120
1000
10 K
700
800
500
800
700
,
40
30
50
100
50
75
S
S
MT2 POSITIVE
MT2 NEGATIVE
Q2
Q3
Q1
TJ = 125
°
C
VPK = 400 V
600 V
800 V
TJ = 125
°
C
VPK = 400 V
600 V
800 V
GATE OPEN
TJ = 100
°
C
125
°
C
110
°
C
GATE OPEN
TJ = 100
°
C
125
°
C
110
°
C
60
8.0 K
10 K
8.0 K
4.0 K
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